Journal of Engineering and Computer Innovations
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Article Number - DC4DD528645


Vol.3(2), pp. 26-35 , March 2012
DOI: 10.5897/JECI12.005
ISSN: 2141-6508



Full Length Research Paper

Optoelectronic properties of zinc blende and wurtzite structured binary solids



D. S. Yadav
  • D. S. Yadav
  • Department of Physics, Ch. Charan Singh P G College, Heonra, Etawah-206001 (U.P.) India.
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Chakresh kumar
  • Chakresh kumar
  • Department of Electronics and Communication Tezpur University, Napaam, Tezpur-784001, Assam.
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Jitendra Singh
  • Jitendra Singh
  • Department of Electronics and Communication Tezpur University, Napaam, Tezpur-784001, Assam.
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Parashuram
  • Parashuram
  • Department of Electronics and Communication Tezpur University, Napaam, Tezpur-784001, Assam.
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Ghanendra Kumar
  • Ghanendra Kumar
  • Department of Electronics and Communication. IIIT, Jablapur- 482 005, Madhya Pradesh, India.
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 Accepted: 05 March 2012  Published: 31 March 2012

Copyright © 2012 Author(s) retain the copyright of this article.
This article is published under the terms of the Creative Commons Attribution License 4.0


 

In this paper, we studied zinc blende (ZB) and wurtzite (Wu) type structured binary solids with conduction electrons and calculated the optoelectronic properties such as high frequency refractive index (n), optical susceptibility (χ), electronic polarizability (αe) and crystal ionicity (fi) using the plasma oscillation theory of solids formalism already employed for ternary chalcopyrite semiconductors. The present method is not limited to tetrahedrally coordinated semiconductors and ternary chalcopyrites, but can be used for all semiconducting compounds. We have applied extended formulae on zinc blende (ZB) and wurtzite (Wu) type structured binary semiconductors and found better agreement with the experimental data as compared to the values evaluated by previous researchers. The high frequency refractive index (n), optical susceptibility (χ), electronic polarizability (αe) and crystal ionicity (fi)  of zinc blende (ZB) and wurtzite (Wu) type structure compounds exhibit a linear relationship when plotted on a log–log scale as against the plasmon energy ћωp (in eV), which lies on a straight line. The results for high frequency refractive index differ from experimental values by the following amounts: ZnS (0%), ZnSe (0%), ZnTe (11%), CdS (11%), CdSe (15%), CdTe (20%), HgSe (5%), BN (20%), AlN (16%), AlP (15%), AlAs (0%), AlSb (13%), GaN (18%), GaP (27%), GaAs (8%), GaSb (7%), InN (8%), InP (5%), InAs (0.3%) and InSb (0.9%); and the results for optical susceptibility differ from experimental values by the following amounts: ZnS (10%), ZnSe (2%), ZnTe (8%), CdS (25%), CdSe (17%), CdTe (7%), AlAs (4.8%), AlSb (16%), GaP (1.6%), GaAs (9.8%), GaSb (22.7%), InP (12.8%), InAs (9%) and InSb (20%) in the present study.

 

Key words: A. semiconductors, D. electronic properties, D. optical properties


APA (2012). Optoelectronic properties of zinc blende and wurtzite structured binary solids. Journal of Engineering and Computer Innovations, 3(2), 26-35.
Chicago D. S. Yadav, Chakresh kumar, Jitendra Singh, Parashuram and Ghanendra Kumar. "Optoelectronic properties of zinc blende and wurtzite structured binary solids." Journal of Engineering and Computer Innovations 3, no. 2 (2012): 26-35.
MLA D. S. Yadav, et al. "Optoelectronic properties of zinc blende and wurtzite structured binary solids." Journal of Engineering and Computer Innovations 3.2 (2012): 26-35.
   
DOI 10.5897/JECI12.005
URL http://academicjournals.org/journal/JECI/article-abstract/DC4DD528645

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