African Journal of
Mathematics and Computer Science Research

  • Abbreviation: Afr. J. Math. Comput. Sci. Res.
  • Language: English
  • ISSN: 2006-9731
  • DOI: 10.5897/AJMCSR
  • Start Year: 2008
  • Published Articles: 259

Full Length Research Paper

Comparison of electron-plasmon scattering effect on low-field electron mobility in ZnO and SiC

  H. Arabshahi* and M. Rezaee Rokn-Abadi
Physics Department, Ferdowsi University of Mashhad, Mashhad, Iran.
Email: [email protected]

  •  Accepted: 08 September 2009
  •  Published: 31 October 2009



Iterative technique is used to solve Boltzmann transport equation for calculating temperature and doping dependencies of electron mobility in ZnO and SiC materials. The two-mode nature of the polar optic phonons is considered jointly with deformation potential acoustic, piezoelectric, ionized impurity and electron-plasmon scattering. Band non-parabolicity, admixture of p functions, arbitrary degeneracy of the electron distribution, and the screening effects of free carriers on the scattering probabilities are incorporated. It is shown that electron-plasmon scattering affects substantially the low-field electron mobility in bulk ZnO and SiC. It is found that the electron mobility decreases monotonically as the temperature increases from 300 - 600 K. The low temperature value of electron mobility increases significantly with increasing doping concentration. The iterative results are in fair agreement with other recent calculations obtained using the relaxation-time approximation and experimental methods.


Key words: Electron-plasmon, relaxation-time, Boltzmann equation, non-parabolicity, degeneracy.