International Journal of
Physical Sciences

  • Abbreviation: Int. J. Phys. Sci.
  • Language: English
  • ISSN: 1992-1950
  • DOI: 10.5897/IJPS
  • Start Year: 2006
  • Published Articles: 2578

Full Length Research Paper

Structural, optical and electrical properties of ZnO thin films grown by radio frequency (rf) sputtering in oxygen atmosphere

   Juan M. Camacho1, R. Castro-Rodríguez1, A. Iribarren2, E. Chan y Díaz3*, A. Duarte-Moller3 and P. Sánchez Santiago3   
  1Applied Physics Department, CINVESTAV-IPN, Unidad Mérida, 97310, Mérida, Yucatán, México. 2D.I.E.E.S. Instituto de Materiales y Reactivos, Universidad de La Habana, Zapata y G, Vedado, Plaza, Ciudad de la Habana 10400, Cuba. 3Centro de Investigación en Materiales Avanzados, Miguel de Cervantes Saavedra 120, Complejo industrial Chihuahua 31109, Chihuahua, Chih, México.
Email: [email protected]

  •  Accepted: 12 October 2011
  •  Published: 16 November 2011

Abstract

 

Growth conditions for ZnO thin films were found for their potential use as a buffer layer in CdTe/CdS solar cells. Electrical, optical and structural properties were investigated as a function of the oxygen pressure during the growth of ZnO by radio frequency (rf) sputtering. The electrical behavior is explained in terms of the structural properties. Our results suggest that optimal oxygen partial pressure is 4 Pa for attaining a ZnO thin film as a buffer layer, with resistivity on the order of 103 W cm and an average of optical transmission of 89%.

 

Key words: Zinc oxide, transparent conducting oxide, buffer layer, solar cell, electrical resistance, optical transmission.

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