Abstract

In this research, we applied one-step electrodeposition to fabricate CuInSe₂ films. Deposition parameters, including the pH value of the plating solution, the deposition time and the current density, were adjusted to find preferable conditions to fabricate high quality CuInSe₂ film. Material properties were examined by X-ray diffraction (XRD), scanning electron microscope (SEM) images and energy dispersive spectrometer (EDS) analysis. Experimental results indicate that plating solution with a pH value of 1.5, a current density of 0.3 ASD and deposition time of 15 min are the optimal parameters for CuInSe₂ film deposition. It is our belief that our findings can further enhance the development of high-quality electrodeposited film for use in future copper indium selenide(CIS) solar cell applications.

Key words: Electrodeposition, CuInSe₂, pH value, current density, solar cell.