In this research, we applied one-step electrodeposition to fabricate CuInSe2 films. Deposition parameters, including the pH value of the plating solution, the deposition time and the current density, were adjusted to find preferable conditions to fabricate high quality CuInSe2 film. Material properties were examined by X-ray diffraction (XRD), scanning electron microscope (SEM) images and energy dispersive spectrometer (EDS) analysis. Experimental results indicate that plating solution with a pH value of 1.5, a current density of 0.3 ASD and deposition time of 15 min are the optimal parameters for CuInSe2 film deposition. It is our belief that our findings can further enhance the development of high-quality electrodeposited film for use in future copper indium selenide(CIS) solar cell applications.
Key words: Electrodeposition, CuInSe2, pH value, current density, solar cell.
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