This work aims to derive an expression to describe the reflection coefficient of an escape electron from metal-semiconductor interface of DSSC. The derivation was obtained by analytically solving electron diffusion equation with assumptions of steady state DSSC and negligible current flow at the outer most part of the film. The derived corrected Richardson-Dushman equation including a reflection of electron wave at potential barrier is inserted into current-voltage (JV) characteristic equation. We showed that voltage loss at various temperature and current densities do not vary with and without reflection coefficient. However, the reflection coefficient is shown to be insignificant to JV characteristics with respect to potential barriers. Our results confirm the effect of potential barrier through which an electron must be accelerated in order to gain sufficient energy necessary for high power conversion efficiency.
Key words: DSSC, drift-diffusion, metal-semiconductor, reflection coefficient.
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