International Journal of
Physical Sciences

  • Abbreviation: Int. J. Phys. Sci.
  • Language: English
  • ISSN: 1992-1950
  • DOI: 10.5897/IJPS
  • Start Year: 2006
  • Published Articles: 2574

Full Length Research Paper

Research in physical properties of AlxGa1-xAs III-V Arsenide ternary semiconductor alloys

Alla Srivani
  • Alla Srivani
  • Department of Physics, T. J. P. S College and Sri Mittapalli college of Engineering, Guntur, Andhra Pradesh, India.
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Vedam Ram Murthy
  • Vedam Ram Murthy
  • Department of Physics, T. J. P. S College and Sri Mittapalli college of Engineering, Guntur, Andhra Pradesh, India.
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G. Veera Raghavaiah
  • G. Veera Raghavaiah
  • Department of Physics, T. J. P. S College and Sri Mittapalli college of Engineering, Guntur, Andhra Pradesh, India.
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  •  Received: 25 January 2013
  •  Accepted: 28 May 2014
  •  Published: 30 June 2014

References

Abbasi FM, Ahmad H, Perveen F, Inamullah, Sajid M, Brar DS (2010). Assesment of genomic relationship between Oryza sativa and Oryza australiensis. Afr. J. Biotechnol. 9(12):1312-1316.
 
Adachi S (1992). "Physical Properties of III-V Semiconductor Compounds, "John Wiley & Sons, New York.
Crossref
 
 
Djurišić AB (2002). Progress in the room-temperature optical functions of semiconductors. Materials Science and Engineering R Reports 38:237.
Crossref
 
 
Priester C, Grenet G (2000). "Surface roughness and alloy stability interdependence in lattice-matched and heteroepitaxy". Phys. Rev. B. 61(23)15.
Crossref
 
 
Priester C, Grenet G (2001). "Surface roughness and alloy stability interdependence in lattice-matched and heteroepitaxy". Phys. Rev. B. 61(23)15.
 
 
Das TD, Mondal A, Dhar S (2007). IEEE International Workshop on the Physics of Semiconductor Devices (IWPSD), P. 511.
 
 
Díaz-Reyes J (2002). "Raman and Hall characterization of AlGaAs epilayers grown by MOCVD using elemental arsenic", Superficies y Vacío15, 22-25, diciembre de ãSociedad Mexicana de Ciencia de Superficies y de Vacío.
 
 
Edward DP (1991). Handbook of Optical Constants of Solids, Volume 2, Academic press, 21 march 1991. http://www.cleanroom.byu.edu/EW_ternary.phtml-BRIGHAM YOUNG UNIVERSITY, Department of Electrical and Computer Engineering, "Direct Energy Band Gap in Ternary Semiconductors".
 
 
Murthy VR, Jeevan kumar R, Subbaiah DV (1986). "New dispersion relation: Relation to ORD, MORD and Molecular Polarization' Proc viii Annual conference on IEEE/EMBS, Texas, XIV, P. 1636-1639.
 
 
Naser MA, Zaliman S, Uda H, Yarub A (2009). Investigation of the absorption coefficient, refractive index, energy band gap, and film thickness for Al0.11Ga0.89N, Al0.03Ga0.97N, and GaN by optical transmission method, Int. J. Nanoelect. Mater. 2:189-195.
 
 
Puron E, Martinez-Criado G, Riech I (1999). "Growth and Optical characterization of indirect-gap AlxGa1-xAs alloys J. Appl. Phys. 86(1):1.
 
 
 
 Sathyalatha KC (2012). PhD Thesis"Optical and related properties of few II-VI and III-V Semiconductors" SKU University, Anantapuram.
William MH, David RL (2010). CRC Hand book of Physics and chemistry, Taylor & Francis Group, 91st Edition, 26-May-2010.
 
 
Yadav DS, kumar C, Singh J Parashuram, Kumar G (2012). "Optoelectronic properties of zinc blende and wurtzite structured binary solids". J. Eng. Comput. Innov. 3(2):26-35.
Crossref
 

 

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