Journal of
Engineering and Computer Innovations

  • Abbreviation: J. Eng. Comput. Innov.
  • Language: English
  • ISSN: 2141-6508
  • DOI: 10.5897/JECI
  • Start Year: 2010
  • Published Articles: 32

Full Length Research Paper

Ultra high speed semiconductor electro-optic modulator devices for gigahertz operation in optical communication systems

Abd El–Naser A. Mohamed, Mohamed A. Metawe'e Ahmed Nabih Zaki Rashed* and Amira I. M. Bendary
Electronics and Electrical Communications Engineering Department, Faculty of Electronic Engineering, Menouf 32951, Menoufia University, Egypt
Email: [email protected]

  •  Accepted: 03 November 2011
  •  Published: 30 November 2011



The effects of electrodes geometry and temperature on high frequency transmission characteristics are deeply investigated against semiconductor material based electro-optic modulator devices such as aluminum gallium arsenide (AlGaAs) and optical waveguide parameters. Optimization of the electro-optic modulator parameters, where the effective index plays an essential role in the evaluation of the bandwidth structure, is also performed. Therefore, a theoretical analysis of the capacitance, the characteristic impedance and the effective index determined how to increase the bandwidth. The effects of design parameters on the modulating voltage and optical bandwidth are also investigated for different materials based electro-optic modulators by using rigorous transmission modeling techniques.


Key words: Electro-optic modulator, semiconductor material, optical bandwidth, and high transmission performance