Journal of
Engineering and Technology Research

  • Abbreviation: J. Eng. Technol. Res.
  • Language: English
  • ISSN: 2006-9790
  • DOI: 10.5897/JETR
  • Start Year: 2009
  • Published Articles: 184

Full Length Research Paper

Low temperature synthesis of La2O3 and CrO2 by Sol–gel process

A. Bahari1*, A. Anasari2 and Z. Rahmani3
1Department of Physics, University of Mazandaran, Babolsar, Iran. 2Department of Physics, Islamic Azad University, Sari Branch, Sari, Iran.  3Department of Physics, Islamic Azad University, Central Tehran Branch, Iran.
Email: [email protected]

  • Article Number - 642383112607
  • Vol.3(7), pp. 203-208, July 2011
  •  Accepted: 16 March 2011
  •  Published: 31 July 2011

Abstract

Some issues such as tunneling, leakage current and light atom penetration through the film are threatening the ultra thin SiO2 be as a good dielectric for future industrial and electronic devices and in ceramic technologies. A series of experiments to synthesis La2O3 as well as CrO2 has been done at low temperature with using sol-gel method. The nano structural properties of La2O3/CrO2 equipped with 5 to 40 nm size are investigated. The obtained results show the potential of La2O3/CrO2 for not only for lowering the interface–state density, but also as a good dielectric for the future of nano electronic. These structures have been studied by using XRD (x-ray diffraction) technique and X- powder method.

Key words: Nano structures, La2O3, gate dielectric, x-powder method and sol-gel method.

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