Failure model and detecting method for MOSFET degradation in DC-DC power converters

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Li-Feng Wu
College of Information Engineering, Capital Normal University, Beijing 100048, China.
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Peng-Fei Dong
Beijing Engineering Research Center of High Reliable Embedded System, Capital Normal University, Beijing 100048, China.
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Yong Guan
Beijing Key Laboratory of Electronic System Reliable Technology, Capital Normal University, Beijing, 100048 China.
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Guo-Hui Wang
College of Information Engineering, Capital Normal University, Beijing 100048, China.
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Xiao-Juan Li
Beijing Key Laboratory of Electronic System Reliable Technology, Capital Normal University, Beijing, 100048 China.
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Copyright © 2023 Author(s) retain the copyright of this article.
This article is published under the terms of the Creative Commons Attribution License 4.0.

Authors

Li-Feng Wu
College of Information Engineering, Capital Normal University, Beijing 100048, China.

Peng-Fei Dong
Beijing Engineering Research Center of High Reliable Embedded System, Capital Normal University, Beijing 100048, China.

Yong Guan
Beijing Key Laboratory of Electronic System Reliable Technology, Capital Normal University, Beijing, 100048 China.

Guo-Hui Wang
College of Information Engineering, Capital Normal University, Beijing 100048, China.

Xiao-Juan Li
Beijing Key Laboratory of Electronic System Reliable Technology, Capital Normal University, Beijing, 100048 China.

Corresponding Author Email: [email protected]

This article is published under the terms of the Creative Commons Attribution License 4.0

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