Scientific Research and Essays

  • Abbreviation: Sci. Res. Essays
  • Language: English
  • ISSN: 1992-2248
  • DOI: 10.5897/SRE
  • Start Year: 2006
  • Published Articles: 2758

Full Length Research Paper

Failure model and detecting method for MOSFET degradation in DC-DC power converters

Li-Feng Wu
  • Li-Feng Wu
  • College of Information Engineering, Capital Normal University, Beijing 100048, China.
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Peng-Fei Dong
  • Peng-Fei Dong
  • Beijing Engineering Research Center of High Reliable Embedded System, Capital Normal University, Beijing 100048, China.
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Yong Guan
  • Yong Guan
  • Beijing Key Laboratory of Electronic System Reliable Technology, Capital Normal University, Beijing, 100048 China.
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Guo-Hui Wang
  • Guo-Hui Wang
  • College of Information Engineering, Capital Normal University, Beijing 100048, China.
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Xiao-Juan Li
  • Xiao-Juan Li
  • Beijing Key Laboratory of Electronic System Reliable Technology, Capital Normal University, Beijing, 100048 China.
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  •  Received: 02 March 2014
  •  Accepted: 28 March 2014
  •  Published: 15 April 2014

How to cite this article

APA /
Wu,L-F., Dong,P-F., Guan,Y., Wang, G-H., & Li, X-J. (2014). Failure model and detecting method for MOSFET degradation in DC-DC power converters. Scientific Research and Essays, 9(7), 169 - 173.
Chicago /
Wu, Li-Feng,, Dong, Peng-Fei,, Guan, Yong,, Wang, Guo-Hui,, and Li, Xiao-Juan,    . "Failure model and detecting method for MOSFET degradation in DC-DC power converters." Scientific Research and Essays 9, no. 7 (2014): 169 - 173.
MLA /
Wu, et al. "Failure model and detecting method for MOSFET degradation in DC-DC power converters." Scientific Research and Essays 9.7 (2014): 169 - 173.
DOI /
https://doi.org/10.5897/SRE2014.5856
URL /
https://academicjournals.org/journal/SRE/article-abstract/BD683C543742

Copyright © 2023 Author(s) retain the copyright of this article.

This article is published under the terms of the Creative Commons Attribution License 4.0

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