International Journal of
Physical Sciences

  • Abbreviation: Int. J. Phys. Sci.
  • Language: English
  • ISSN: 1992-1950
  • DOI: 10.5897/IJPS
  • Start Year: 2006
  • Published Articles: 2557

Full Length Research Paper

Look ahead dynamic threshold voltage control for enhanced write margin of 45 NM 7T-SRAM cell

Shyam Akashe* and Sanjay Sharma
Department of Electronics and Communication Engineering, Thapar University, Patiala, Punjab, India.
Email: [email protected]

  •  Accepted: 28 March 2011
  •  Published: 04 June 2011


Instability of SRAM memory cells derived from aggressive technology scaling has recently been one of the most significant issues. Although a 7T–SRAM cell with an area tolerable separated read port improves read margins even at sub-1V, it unfortunately results in degradation of write margins. A new memory cell adopting a look ahead body-bias which dynamically controls the threshold voltage was proposed in order to assist the write operation. Simulation results have shown improvement in both the write margins and access time.


Key words: Body-bias, SRAM, low power design.