International Journal of
Physical Sciences

  • Abbreviation: Int. J. Phys. Sci.
  • Language: English
  • ISSN: 1992-1950
  • DOI: 10.5897/IJPS
  • Start Year: 2006
  • Published Articles: 2533

Full Length Research Paper

Structural properties of binary semiconductors

D. S. Yadav1 and Chakresh Kumar2*
1Department of Physics, Ch. Charan Singh P G College, Heonra, Etawah-206001 (U.P.) India. 2Department of Electronics and Communication Engineering Tezpur University, Napam-784001, India
Email: [email protected]

  •  Accepted: 30 May 2013
  •  Published: 09 June 2013

Abstract

Using the plasma oscillations theory of solids, 2 empirical relations have been proposed for the calculation of the structural properties such as bond-stretching central force constant (α) and bond-bending non-central force constant (β) for II-VI and III-V group binary semiconductors. We find that α =D (Ñ›ωp) 2 and β = S (Ñ›ωp) 2, where D and S are constants. The numerical values of D and are respectively, 0.151 and 0.016 for II-VI and 0.177 and 0.031 for III-V group binary semiconductors. The structural properties of binary semiconductors exhibit a linear relationship when plotted on a log-log scale against the plasmon energy Ñ›ωp (in eV), which lies on the straight lines. We have applied the proposed empirical relations on these binary semiconductors and found a better agreement with the experimental data as compared to the values evaluated by earlier researchers.

 

Key words: Plasmon energy, structural properties, III-V and II-VI Semiconductors.