Abstract

Surface-etched Pt/gallium oxide semiconductor structure has been successfully fabricated and studied for the sensing of oxygen gas. The effects of the sandwich oxide structure with larger sensing area on the oxygen gas sensing property are investigated. In the existence of the etched V-groove gallium oxide geometry, its electrical and sensing properties, that is, high sensitivity, significant increase in output current and short response time are characterized. Under the equipment temperature of about 860°C and changeable oxygen gas in nitrogen, a large variation of dynamic resistance 63 KΩ is obtained. From experiment, good stability and repeatability of the oxide sensor are demonstrated when tested under different oxygen concentration. These properties show that the oxide structure has a good potential for high sensitivity oxygen sensor.

Key words: Gallium oxide, oxygen gas sensor, sensitivity, response time.