International Journal of
Physical Sciences

  • Abbreviation: Int. J. Phys. Sci.
  • Language: English
  • ISSN: 1992-1950
  • DOI: 10.5897/IJPS
  • Start Year: 2006
  • Published Articles: 2569

Full Length Research Paper

Enhanced oxygen gas sensor by surface-etched gallium oxide

Long-Tsong Ju1* and Shr-Liang Ju2
  1Department of Computer Application Engineering, Far East University, Tainan, Taiwan 744, Republic of China. 2Private Da Heng Grammar Short-Term Busiban, Tainan, Taiwan 744, Republic of China.
Email: [email protected]

  •  Accepted: 09 August 2011
  •  Published: 23 November 2011



Surface-etched Pt/gallium oxide semiconductor structure has been successfully fabricated and studied for the sensing of oxygen gas. The effects of the sandwich oxide structure with larger sensing area on the oxygen gas sensing property are investigated. In the existence of the etched V-groove gallium oxide geometry, its electrical and sensing properties, that is, high sensitivity, significant increase in output current and short response time are characterized. Under the equipment temperature of about 860°C and changeable oxygen gas in nitrogen, a large variation of dynamic resistance 63 KΩ is obtained. From experiment, good stability and repeatability of the oxide sensor are demonstrated when tested under different oxygen concentration. These properties show that the oxide structure has a good potential for high sensitivity oxygen sensor.


Key words: Gallium oxide, oxygen gas sensor, sensitivity, response time.