International Journal of
Physical Sciences

  • Abbreviation: Int. J. Phys. Sci.
  • Language: English
  • ISSN: 1992-1950
  • DOI: 10.5897/IJPS
  • Start Year: 2006
  • Published Articles: 2572

Full Length Research Paper

The growth of thin Titanium oxide (TiO2) film and nano size TiO2 powder

M. Riazian1,2 and A. Bahari2*
1Islamic Azad University, Tonekabon Branch, Tonekabon, Iran. 2Department of Physics, University of Mazandaran, Babolsar, Iran
Email: [email protected]

  •  Accepted: 21 March 2011
  •  Published: 04 August 2011

Abstract

The growth of thin films of TiO2 directly on Si surfaces is studied with Auger Electron Spectroscopy. The information from these studies about the titanium oxide properties and the changes of the electronic structure is enhanced by the use of sol-gel method for synthesizing nano-size TiO2 powder. The obtained results show that titanium oxide with higher dielectric constant and amorphous structure can be as a good gate dielectric for the future of CMOS (Complementary- Metal- Oxide- Semiconductor) devices.

 

Key words: Thin film, nano transistor, TiO2 and sol-gel method.

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This article is published under the terms of the Creative Commons Attribution License 4.0

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