International Journal of
Physical Sciences

  • Abbreviation: Int. J. Phys. Sci.
  • Language: English
  • ISSN: 1992-1950
  • DOI: 10.5897/IJPS
  • Start Year: 2006
  • Published Articles: 2569

Article in Press

The effects of Localized trap energy on Carriers Lifetime of Radiative, Auger and Shockley’s Recombination Mechanism for Aluminium Nitride (AlN) Semiconductor

Getu Endale

  •  Received: 05 September 2019
  •  Accepted: 05 May 2020
This study presents the analysis of the variation of effective lifetime of carriers with temperature in different recombination mechanisms for aluminum nitride. Aluminum nitride is stable at high temperatures in inert atmospheres and melts about 2200â—¦C. In a vacuum, AlN decomposes at 10â—¦C. In the air, surface oxidation occurs above 700â—¦C. For hole trap region, the probability of emission of hole much greater than the probability of capture of electron and the process reverse for electron tap region but in the recombination center approximately the capture cross section which represents the probability of taps capturing carriers. The free carrier traps are relatively inactive at high temperatures compared to low temperatures. Only deep levels can trap free carriers at higher temperatures and trap is decreases with increasing temperature as function of localized state energies. All the radiative, Auger and SRH lifetimes are function of temperature and the Auger lifetime is dominated in aluminum nitride (AlN ) compound semiconductor sample.

Keywords: Radiative lifetime, Auger lifetime, SRH lifetimes, Aluminum nitride, Temperature.