Comparison of low field electron transport characteristics in Ge and Si semiconductors and effects of neutron energy deposition on their crystal structure

H. Arabshahi

doi:10.5897/IJPS11.008

International Journal of
Physical Sciences

Abbreviation: Int. J. Phys. Sci.
Language: English
ISSN: 1992-1950
DOI: 10.5897/IJPS
Start Year: 2006
Published Articles: 2572

Full Length Research Paper

Comparison of low field electron transport characteristics in Ge and Si semiconductors and effects of neutron energy deposition on their crystal structure

H. Arabshahi1,2

1Department of Physics, Payame Nour University of Fariman, Fariman, Iran. 2Department of Physics, Ferdowsi University of Mashhad, Mashhad, Iran.
Email: [email protected]

Article Number - A894F8A22458
Vol.6(9), pp. 2327-2334 , May 2011
https://doi.org/10.5897/IJPS11.008

Accepted: 21 April 2011
Published: 04 May 2011

Copyright © 2024 Author(s) retain the copyright of this article.
This article is published under the terms of the Creative Commons Attribution License 4.0.

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International Journal of Physical Sciences

Comparison of low field electron transport characteristics in Ge and Si semiconductors and effects of neutron energy deposition on their crystal structure

H. Arabshahi1,2

International Journal of
Physical Sciences