Journal of
Engineering and Computer Innovations

  • Abbreviation: J. Eng. Comput. Innov.
  • Language: English
  • ISSN: 2141-6508
  • DOI: 10.5897/JECI
  • Start Year: 2010
  • Published Articles: 26

Full Length Research Paper

Optoelectronic properties of zinc blende and wurtzite structured binary solids

D. S. Yadav
  • D. S. Yadav
  • Department of Physics, Ch. Charan Singh P G College, Heonra, Etawah-206001 (U.P.) India.
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Chakresh kumar
  • Chakresh kumar
  • Department of Electronics and Communication Tezpur University, Napaam, Tezpur-784001, Assam.
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Jitendra Singh
  • Jitendra Singh
  • Department of Electronics and Communication Tezpur University, Napaam, Tezpur-784001, Assam.
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Parashuram
  • Parashuram
  • Department of Electronics and Communication Tezpur University, Napaam, Tezpur-784001, Assam.
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Ghanendra Kumar
  • Ghanendra Kumar
  • Department of Electronics and Communication. IIIT, Jablapur- 482 005, Madhya Pradesh, India.
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  •  Accepted: 05 March 2012
  •  Published: 31 March 2012

Abstract

 

In this paper, we studied zinc blende (ZB) and wurtzite (Wu) type structured binary solids with conduction electrons and calculated the optoelectronic properties such as high frequency refractive index (n), optical susceptibility (χ), electronic polarizability (αe) and crystal ionicity (fi) using the plasma oscillation theory of solids formalism already employed for ternary chalcopyrite semiconductors. The present method is not limited to tetrahedrally coordinated semiconductors and ternary chalcopyrites, but can be used for all semiconducting compounds. We have applied extended formulae on zinc blende (ZB) and wurtzite (Wu) type structured binary semiconductors and found better agreement with the experimental data as compared to the values evaluated by previous researchers. The high frequency refractive index (n), optical susceptibility (χ), electronic polarizability (αe) and crystal ionicity (fi)  of zinc blende (ZB) and wurtzite (Wu) type structure compounds exhibit a linear relationship when plotted on a log–log scale as against the plasmon energy ћωp (in eV), which lies on a straight line. The results for high frequency refractive index differ from experimental values by the following amounts: ZnS (0%), ZnSe (0%), ZnTe (11%), CdS (11%), CdSe (15%), CdTe (20%), HgSe (5%), BN (20%), AlN (16%), AlP (15%), AlAs (0%), AlSb (13%), GaN (18%), GaP (27%), GaAs (8%), GaSb (7%), InN (8%), InP (5%), InAs (0.3%) and InSb (0.9%); and the results for optical susceptibility differ from experimental values by the following amounts: ZnS (10%), ZnSe (2%), ZnTe (8%), CdS (25%), CdSe (17%), CdTe (7%), AlAs (4.8%), AlSb (16%), GaP (1.6%), GaAs (9.8%), GaSb (22.7%), InP (12.8%), InAs (9%) and InSb (20%) in the present study.

 

Key words: A. semiconductors, D. electronic properties, D. optical properties