September 2011

Transient behavior and transmission bit rates analysis of optoelectronic integrated devices laser diode (LD) and light emitting diode (LED) under amplification and ionizing irradiation environments

  This paper has proposed the device that is composed of a hetrojunction phototransistor (HPT) and a laser diode (LD). The expressions describing the transient response of the output. The rise time, and the output derivative are derived. The effect of the various device parameters on the transient response is outlined. The results show that the transient response of these types of devices is strongly dependent...

Author(s): Abd El-Naser A. Mohamed, Nabil A. Ayad, Ahmed Nabih Zaki Rashed and Hazem M. El-Hageen

September 2011

Dependence of second order nonlinear susceptibility and efficiency on shape of CdS quantum dot

  This paper deals with the dependence of second order nonlinear susceptibility and second harmonic generation (SHG) efficiency on the shape of CdS quantum dot. A relation has been found between the electronic structure and second order nonlinear susceptibility. The effective mass approximation has been used to find the energy levels. We have considered both intra band and inter band near resonant transitions...

Author(s): M. Paul, P. Bhattacharya, B. Das and S. Rani