Abstract

An ensemble Monte Carlo simulation has been used for the simultaneous evaluation of the electronic steady-state transport in n⁺nn⁺ ZnS and ZnO diode. The anode voltage ranges from 0 to 4 V. Electronic states within the conduction band valleys are based on a three-valley model which are represented by nonparabolic ellipsoidal valleys centered on the important symmetry point of the first Brillouin zone. Our calculation shows that the saturation mean drift velocity for electrons in the channel of ZnO and ZnS are about 2 × 10⁵ and 1.25 × 10⁵  ms^-1, respectively at a bias voltage of 4 V. It is shown also that the mean drift velocity in channel decrease sharply with increasing temperature in both structure and reach to saturated value about 1 × 10⁵ and 0.6 × 10⁵ ms^-1  for ZnO and ZnS, respectively.

Key words: Ensemble Monte Carlo, ellipsoidal valleys, brillouin zone, drift velocity.