Comparison of electron transport properties in submicrometer ZnS and ZnO n+nn+ diode using ensemble Monte Carlo simulation

M. R. Khalvati; H. Arabshahi; M. Izadifard; A. Mokhles Gerami; H. Rahimpour Soleimani

doi:10.5897/IJPS.9000128

International Journal of
Physical Sciences

Abbreviation: Int. J. Phys. Sci.
Language: English
ISSN: 1992-1950
DOI: 10.5897/IJPS
Start Year: 2006
Published Articles: 2572

Full Length Research Paper

Comparison of electron transport properties in submicrometer ZnS and ZnO n+nn+ diode using ensemble Monte Carlo simulation

M. R. Khalvati1*, H. Arabshahi2, M. Izadifard1, A. Mokhles Gerami3 and H. Rahimpour Soleimani3

1Department of Physics, Shahrood University of Technology, Shahrood, Iran. 2Department of Physics, Ferdowsi University of Mashhad, Mashhad, Iran. 3Department of Physics, University of Guilan, Rasht, Iran.
Email: mohammad_khalvati@yahoo. com

Article Number - C338ED726645
Vol.5(6), pp. 683-689 , June 2010
https://doi.org/10.5897/IJPS.9000128

Accepted: 14 April 2010
Published: 30 June 2010

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