International Journal of
Physical Sciences

  • Abbreviation: Int. J. Phys. Sci.
  • Language: English
  • ISSN: 1992-1950
  • DOI: 10.5897/IJPS
  • Start Year: 2006
  • Published Articles: 2563

Full Length Research Paper

An accurate numerical model for charge density in ballistic carbon nanotube field effect transistors (CNTFETs)

Bao-jun Liu1, Li Cai1, Xiaokuo Yang1, Hongtu Huang1, Xiaohui Zhao1 and Ying Wen2        
1Science Institute, Air Force Engineering University, Shanxi Xi’An, China, 710051. 2Engineering College, Air Force Engineering University, Shanxi Xi’An, China, 710038.
Email: [email protected]

  •  Accepted: 24 August 2011
  •  Published: 02 January 2012

Abstract

Since the discovery of carbon nanotube (CNT), a great deal of groups pays more attention to it due to its unique properties. The theory of ballistic transport carbon nanotube field effect transistors (CNTFETs) is presented in the paper, and then a numerical model based on Newton-Raphson and linear approximation method for charge densities in CNTFET is proposed. The model could efficiently provide accurate solution to the self-consistent potential in a CNTFET, which is a function of parameters such as terminal voltages, CNT diameter, and Fermi level and so on. The model is simulated and the results show that compared with the piece-wise linear approximation, the numerical model in the paper is more accurate and efficient.

 

Key words: Newton-Raphson method, ballistic carbon nanotube field effect transistors (CNTFETs), numerical model, self-consistent potential.