An accurate numerical model for charge density in ballistic carbon nanotube field effect transistors (CNTFETs)
Bao-jun Liu1, Li Cai1, Xiaokuo Yang1, Hongtu Huang1, Xiaohui Zhao1 and Ying Wen2
1Science Institute, Air Force Engineering University, Shanxi Xi’An, China, 710051.
2Engineering College, Air Force Engineering University, Shanxi Xi’An, China, 710038.
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