An accurate numerical model for charge density in ballistic carbon nanotube field effect transistors (CNTFETs)

Bao-jun Liu; Li Cai; Xiaokuo Yang; Hongtu Huang; Xiaohui Zhao; Ying Wen

doi:10.5897/IJPS11.068

International Journal of
Physical Sciences

Abbreviation: Int. J. Phys. Sci.
Language: English
ISSN: 1992-1950
DOI: 10.5897/IJPS
Start Year: 2006
Published Articles: 2572

Full Length Research Paper

An accurate numerical model for charge density in ballistic carbon nanotube field effect transistors (CNTFETs)

Bao-jun Liu1, Li Cai1, Xiaokuo Yang1, Hongtu Huang1, Xiaohui Zhao1 and Ying Wen2

1Science Institute, Air Force Engineering University, Shanxi Xi’An, China, 710051. 2Engineering College, Air Force Engineering University, Shanxi Xi’An, China, 710038.
Email: [email protected]

Article Number - E37F64B14464
Vol.7(1), pp. 18 - 23 , January 2012
https://doi.org/10.5897/IJPS11.068

Accepted: 24 August 2011
Published: 02 January 2012

Copyright © 2024 Author(s) retain the copyright of this article.
This article is published under the terms of the Creative Commons Attribution License 4.0.

CrossRef Citations (0)

See more citations on Google Scholar

1

No citation found

This article is published under the terms of the Creative Commons Attribution License 4.0

Back to Vol. 7 No. 1

Back to articles

Views: 0
Downloads: 0

Related Articles:
On Google
On Google Scholar

Articles on Google by:

International Journal of Physical Sciences

An accurate numerical model for charge density in ballistic carbon nanotube field effect transistors (CNTFETs)

Bao-jun Liu1, Li Cai1, Xiaokuo Yang1, Hongtu Huang1, Xiaohui Zhao1 and Ying Wen2

International Journal of
Physical Sciences