Study of the high pressure and temperature response of silicon, germanium and gallium arsenide electronic energy bands

Full Length Research Paper

A. Habanyama
Department of Physics, Copperbelt University, P. O. Box 21692, Jambo Drive, Riverside, Kitwe 10101, Zambia.
Search for this author on:
Google Scholar

D. Nyirenda
Department of Physics, Copperbelt University, P. O. Box 21692, Jambo Drive, Riverside, Kitwe 10101, Zambia.
Search for this author on:
Google Scholar

J. Simfukwe
Department of Physics, Copperbelt University, P. O. Box 21692, Jambo Drive, Riverside, Kitwe 10101, Zambia.
Search for this author on:
Google Scholar

S. K. Mkhonta
Department of Physics, University of Eswatini, Private Bag 4, Kwaluseni M201, Zambia.
Search for this author on:
Google Scholar

A. Srivastava
Department of Physics, Copperbelt University, P. O. Box 21692, Jambo Drive, Riverside, Kitwe 10101, Zambia.
Search for this author on:
Google Scholar

Copyright © 2024 Author(s) retain the copyright of this article.
This article is published under the terms of the Creative Commons Attribution License 4.0.

Authors

A. Habanyama
Department of Physics, Copperbelt University, P. O. Box 21692, Jambo Drive, Riverside, Kitwe 10101, Zambia.

D. Nyirenda
Department of Physics, Copperbelt University, P. O. Box 21692, Jambo Drive, Riverside, Kitwe 10101, Zambia.

J. Simfukwe
Department of Physics, Copperbelt University, P. O. Box 21692, Jambo Drive, Riverside, Kitwe 10101, Zambia.

S. K. Mkhonta
Department of Physics, University of Eswatini, Private Bag 4, Kwaluseni M201, Zambia.

A. Srivastava
Department of Physics, Copperbelt University, P. O. Box 21692, Jambo Drive, Riverside, Kitwe 10101, Zambia.

Corresponding Author Email: [email protected]

This article is published under the terms of the Creative Commons Attribution License 4.0

Views: 0
Downloads: 0