How to cite this article
APA /
Habanyama, A., Nyirenda, D., Simfukwe, J., Mkhonta, S. K., & Srivastava, A. (2024). Study of the high pressure and temperature response of silicon, germanium and gallium arsenide electronic energy bands. International Journal of Physical Sciences, 19(1), 35-46.
Chicago /
A. Habanyama, D. Nyirenda, J. Simfukwe, S. K. Mkhonta and A. Srivastava
. "Study of the high pressure and temperature response of silicon, germanium and gallium arsenide electronic energy bands." International Journal of Physical Sciences 19, no. 1 (2024): 35-46.
MLA /
A. Habanyama, et al. "Study of the high pressure and temperature response of silicon, germanium and gallium arsenide electronic energy bands." International Journal of Physical Sciences 19.1 (2024): 35-46.