International Journal of
Physical Sciences

  • Abbreviation: Int. J. Phys. Sci.
  • Language: English
  • ISSN: 1992-1950
  • DOI: 10.5897/IJPS
  • Start Year: 2006
  • Published Articles: 2572

Full Length Research Paper

Influence of etching on the optical properties of a-plane-oriented ZnO epilayers grown by plasma-assisted molecular beam epitaxy

Bassirou, L. O.
  • Bassirou, L. O.
  • Université Cheikh Anta Diop, Dakar, Senegal.
  • Google Scholar


  •  Received: 20 October 2015
  •  Accepted: 24 November 2015
  •  Published: 16 December 2015

References

Bagnall DM, Chen YF, Zhu Z, Yao T, Koyam S, Shen MY, Goto T (1997). Optically pumped lasing of ZnO at room temperature. Appl. Phys. Lett. 70 (17):2230.
Crossref

 

Brenner TM, Thomas A.F, Paul FN, Erich PM, Gang C, Dana CO, Thomas EF, Reuben TC (2014). Etch-Resistant Zn1–xMgxO Alloys: An Alternative to ZnO for Carboxylic Acid Surface Modification. J. Phys. Chem. C.118 (24):12599-12607.
Crossref

 

Cao H, Zhao YG, Ong HC, Ho ST, Dai JY, Wu JY, Chang RPH (1998). Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films. Appl. Phys. Lett.73:3656.
Crossref

 

Chang SC, Hicks DB, Laugal RCO (1992). Patterning of zinc oxide thin films. Solid-State Sensor Actuator Workshop (New York: IEEE). pp. 41-45.
Crossref

 

Chauveau JM, Morhain C, Lo B, Vinter B, Vennéguès P, Laügt M, Buell D, Tesseire-Doninelli M, Neu G (2007). Growth and characterization of A-plane ZnO and ZnCoO based heterostructures. Appl. Phys. A 88 (1):65-69.
Crossref

 

Ching CG, Leonard L, Ang CI, Ooi PK, Ng SS, Hassan Z, Hassan HA (2013). Effects of the Nitric Acid Concentrations on the Etching Process, Structural and Optical Properties of Porous Zinc Oxide Thin Films. Sains Malaysiana 42(9):1327-1332.

 

Ding P, Xinhua P, Jingyun H, Bin L, Honghai Z, Wei C, Zhizhen Y (2012). Growth of p-type a-plane ZnO thin films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy. Mater. Lett. 71:18-20.
Crossref

 

Fernández S, De Abril O, Naranjo FB, Gandía JJ (2011). High quality textured ZnO: Al surfaces obtained by a two-step wet-chemical etching method for applications in thin film silicon solar cells.Sol. Energy Mater. Sol. Cells 95(1):2281-2286.
Crossref

 

Han SK, Soon-Ku H, Jae WL, Jae GK, Myoungho J, Jeong YL, Sun I, Jin SP, Young EI, Jun-Seok H, Takafumi Y (2011). Properties of (11–20) a-plane ZnO films on sapphire substrates grown at different temperatures by plasma-assisted molecular beam epitaxy. Thin Solid Films 519(19):6394-6398.
Crossref

 

Ipa K., Overberg ME, Baik KW, Wilson RG, Kucheyev SO, Williams JS, Jagadish C, Rend F, Heo YW, Norton DP, Zavadae JM, Pearton SJ (2003). ICP dry etching of ZnO and effects of hydrogen. Solid-State Electron. 47:2289-2294.
Crossref

 

Ito Y, Kushida K, Sugawara K, Takeuchi H (1995). A 100-MHz ultrasonic transducer array using ZnO thin films. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 42(2):316-324.
Crossref

 

Jingchang SJB, Hongwei L, Jianze Z, Lizhong H, Ziwen Z, Weifeng L, Guotong D (2007). Realization of controllable etching for ZnO film by NH4Cl aqueous solution and its influence on optical and electrical properties. Appl. Surf. Sci. 253(11):5161-5165.
Crossref

 

Jong-Chang W, Tae-Kyung H, Chen L, Seung-Han K, Jung-Soo P (2011). Transactions on electrical and electronic materials. The Korean Institute of Electrical and Electronic Material Engineers 12(2):51-55.

 

Liang Y (2010). Growth and characterization of nonpolar a-plane ZnO films on perovskite oxides with thin homointerlayer. J. Alloys. Compd. 508(1):158-161.
Crossref

 

Lim SH, Shindo D (2002). High-resolution electron microscopy of stacking faults in heteroepitaxialZnO/LiTaO3. J. Electron Microsc. 51:165-169.
Crossref

 

Look DC (2001). Recent advances in ZnO materials and devices. Mater. Sci. Eng. 80(1-3):383-387.
Crossref

 

Lou KC, Zhu X, Lakdawala H, Kim ES (1997). Study on etch front of piezoelectric ZnO film and new step coverage technique. Ultrason. Symp. 1:565-568.

 

Maki H, Ikoma T, Sakaguchi I (2002). Control of surface morphology of ZnO (0001) by hydrochloric acid etching. Thin Solid Films 411(1):1-176.
Crossref

 

Morhain C, Teisseire M, Vézian S, Vigué F, Raymond F, Lorenzini P, Guion J, Neu G,Faurie J-P (2002). Spectroscopy of Excitons, Bound Excitons and Impurities in h-ZnOEpilayers. Phys. Status Solidi (b) pp. 881-885.
Crossref

 

Özgür Ü, Ya AI, Liu C, Teke A, Reshchikov MA, DoÄŸan S, Avrutin V, Cho S-J, Morkoç H (2005). A comprehensive review of ZnO materials and devices. J. Appl. Phys. 98(4):041301
Crossref

 

Prasad M, Sahula V, Khanna VK (2013). ZnO Etching and Micro tunnel Fabrication for High-Reliability MEMS Acoustic Sensor. Device and Materials Reliability, IEEE Transactions. 14(1):545-554.

 

Sun K, Yuanyuan VL, David BSJ, Thomas NJ (2014). pH-Controlled Selective Etching of Al2O3 over ZnO. Appl. Mater. Interfaces. 6(10):7028-7031.
Crossref

 

Yu P, Tang ZK, Wong GKL, Kawasaki M, Ohtomo A, Koinuma H, Segawa Y (1997). Ultraviolet spontaneous and stimulated emissions from ZnOmicrocrystallite thin films at room temperature. Solid State Commun.103(8):459-463.
Crossref

 

Zhang XT, Liu YC, Zhi ZZ, Zhang JY, Lu YM, Shen DZ, Xu W, Fan XW, Kong XG (2002). Temperature dependence of excitonic luminescence from nanocrystalline ZnO films. J. Lumin. 99(2):149-154.
Crossref

 

Zheng MJ, Zhang LD, Li GH, Shen WZ (2002). Fabrication and optical properties of large-scale uniform zinc oxide nanowire arrays by one-step electrochemical deposition technique. Chem. Phys. Lett. 363(1-2):123-128.
Crossref

 

Zhu J, Emanetoglu NW, Chen Y, Yakshinskiy BV, Lu Y (2004). Wet-chemical etching of () ZnO films ZnO films, Wet-chemical etching of () ZnO films ZnO films, J. Electron. Mater. 33(6):556-559.
Crossref