5 nm gap via conventional photolithography and pattern-size reduction technique
Th. S. Dhahi1*, M. E. Ali1, U. Hashim1,2, Ala’eddin A. Saif2 and T. Nazwa1
1Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, 01000 Kangar, Perlis, Malaysia
2School of Microelectronic Engineering, Universiti Malaysia Perlis, 01000 Kangar, Perlis, Malaysia
Email: [email protected]