Electrical characterization of in-house fabricated polysilicon micro-gap for yeast concentration measurement

Th. S. Dhahi; U. Hashim; N. M. Ahmed; Md. Eaqub Ali; T. Nazwa

doi:10.5897/JETR.9000036

Journal of
Engineering and Technology Research

Abbreviation: J. Eng. Technol. Res.
Language: English
ISSN: 2006-9790
DOI: 10.5897/JETR
Start Year: 2009
Published Articles: 198

Full Length Research Paper

Electrical characterization of in-house fabricated polysilicon micro-gap for yeast concentration measurement

Th. S. Dhahi1*, U. Hashim1, N. M. Ahmed2, Md. Eaqub Ali and T. Nazwa

1Institute of Nano Electronic Engineering,University Malaysia Perlis (UniMAP), Malaysia. 2School of Physics, University Sains Malaysia (USM),Malaysia.
Email: [email protected]

Article Number - 5C7097A12700
Vol.3(8), pp. 246-254 , August 2011
https://doi.org/10.5897/JETR.9000036

Accepted: 07 March 2011
Published: 31 August 2011

Copyright © 2024 Author(s) retain the copyright of this article.
This article is published under the terms of the Creative Commons Attribution License 4.0.

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Journal of Engineering and Technology Research

Electrical characterization of in-house fabricated polysilicon micro-gap for yeast concentration measurement

Th. S. Dhahi1*, U. Hashim1, N. M. Ahmed2, Md. Eaqub Ali and T. Nazwa

Journal of
Engineering and Technology Research