International Journal of
Physical Sciences

  • Abbreviation: Int. J. Phys. Sci.
  • Language: English
  • ISSN: 1992-1950
  • DOI: 10.5897/IJPS
  • Start Year: 2006
  • Published Articles: 2569

Full Length Research Paper

Double-gate tunnel FET with silicon nitride and oxynitride

A. Bahari1*, F. Pourzaman2 and M. Hoseni2
  1Department of Physics, University of Mazandaran, Babolsar, Iran. 2Department of Physics, Islamic Azad University, Tehran-center branch, Tehran, Iran.
Email: [email protected]

  •  Accepted: 27 January 2011
  •  Published: 04 March 2011

Abstract

A. Bahari1*, F. Pourzaman2 and M. Hoseni2

Copyright © 2024 Author(s) retain the copyright of this article.

This article is published under the terms of the Creative Commons Attribution License 4.0

Back to Vol. 6 No. 5
Back to articles
  • Articles on Google by:
SUBSCRIBE TO RSS
SUBMIT MANUSCRIPT
CONFERENCES