International Journal of
Physical Sciences

  • Abbreviation: Int. J. Phys. Sci.
  • Language: English
  • ISSN: 1992-1950
  • DOI: 10.5897/IJPS
  • Start Year: 2006
  • Published Articles: 2572

Full Length Research Paper

Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device

F. Salehuddin1,5*, I. Ahmad1, F. A. Hamid1, A. Zaharim2, U. Hashim3 and P. R. Apte4
  1College of Engineering, Universiti Tenaga Nasional (UNITEN), Kajang, Selangor, Malaysia. 2Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia (UKM), Bangi, Selangor, Malaysia. 3School of Microelectronic Engineering, Universiti Malaysia Perlis (UniMAP), Arau Perlis, Malaysia. 4Indian Institute of Technology (IIT), Bombay, Powai, Mumbai, India. 5Faculty of Electronic and Computer Engineering, Universiti Teknikal Malaysia Melaka (UTeM), Durian Tunggal, Melaka, Malaysia.  
Email: [email protected]

  •  Accepted: 19 October 2011
  •  Published: 23 November 2011

Abstract

 

In this study, Taguchi method was used to optimize the influence of process parameter variations on threshold voltage (VTH) in 45 nm n-channel metal oxide semiconductor (NMOS) device. The orthogonal array, the signal-to-noise ratio, and analysis of variance were employed to study the performance characteristics of a device. In this paper, eleven process parameters (control factors) were varied for 2 levels to perform 12 experiments.Whereas, the two noise factors were varied for 2 levels to get four readings of VTH for every row of experiment. VTH results were used as the evaluation variable. This work was done using technology computer-aided design (TCAD) simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, compensation implantation energy was identified as one of the process parameters that have the strongest effect on the response characteristics. While the halo implantation dosage was identified as an adjustment factor to get the nominal values of threshold voltage for NMOS device equal to 0.176 V.

 

Key words: Process simulation, device simulation, control factor, analysis of variance, Taguchi method.

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