International Journal of
Physical Sciences

  • Abbreviation: Int. J. Phys. Sci.
  • Language: English
  • ISSN: 1992-1950
  • DOI: 10.5897/IJPS
  • Start Year: 2006
  • Published Articles: 2516

Full Length Research Paper

Research in physical properties of AlxGa1-xAs III-V Arsenide ternary semiconductor alloys

Alla Srivani
  • Alla Srivani
  • Department of Physics, T. J. P. S College and Sri Mittapalli college of Engineering, Guntur, Andhra Pradesh, India.
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Vedam Ram Murthy
  • Vedam Ram Murthy
  • Department of Physics, T. J. P. S College and Sri Mittapalli college of Engineering, Guntur, Andhra Pradesh, India.
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G. Veera Raghavaiah
  • G. Veera Raghavaiah
  • Department of Physics, T. J. P. S College and Sri Mittapalli college of Engineering, Guntur, Andhra Pradesh, India.
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  •  Received: 25 January 2013
  •  Accepted: 28 May 2014
  •  Published: 30 June 2014

Abstract

General description of III-Arsenide semiconductors is presented and significance of the present work is stressed. The electrical and optical properties of III-Arsenide from binary semiconductors are evaluated using the principle of additivity involving quadratic expressions. The electrical and optical properties studied in this group include refractive index, optical polarizability, absorption coefficient and energy gap. A comparison of these data is made with reported data wherever available. The significance of the present method developed from refractive indices with out need for sophisticated experimental methods is stressed. The advantage of this group alloys is also outlined.
 
Key words: Physical properties, III-V group, ternary semiconductors, alliminium, gallium, arsenic.