Abstract
General description of III-Arsenide semiconductors is presented and significance of the present work is stressed. The electrical and optical properties of III-Arsenide from binary semiconductors are evaluated using the principle of additivity involving quadratic expressions. The electrical and optical properties studied in this group include refractive index, optical polarizability, absorption coefficient and energy gap. A comparison of these data is made with reported data wherever available. The significance of the present method developed from refractive indices with out need for sophisticated experimental methods is stressed. The advantage of this group alloys is also outlined.
Key words: Physical properties, III-V group, ternary semiconductors, alliminium, gallium, arsenic.
