International Journal of
Physical Sciences

  • Abbreviation: Int. J. Phys. Sci.
  • Language: English
  • ISSN: 1992-1950
  • DOI: 10.5897/IJPS
  • Start Year: 2006
  • Published Articles: 2574

Full Length Research Paper

Research in physical properties of AlxGa1-xAs III-V Arsenide ternary semiconductor alloys

Alla Srivani
  • Alla Srivani
  • Department of Physics, T. J. P. S College and Sri Mittapalli college of Engineering, Guntur, Andhra Pradesh, India.
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Vedam Ram Murthy
  • Vedam Ram Murthy
  • Department of Physics, T. J. P. S College and Sri Mittapalli college of Engineering, Guntur, Andhra Pradesh, India.
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G. Veera Raghavaiah
  • G. Veera Raghavaiah
  • Department of Physics, T. J. P. S College and Sri Mittapalli college of Engineering, Guntur, Andhra Pradesh, India.
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  •  Received: 25 January 2013
  •  Accepted: 28 May 2014
  •  Published: 30 June 2014

How to cite this article

APA /
Srivani, A., Murthy, V. R. & Raghavaiah, G. V. (2014). Research in physical properties of AlxGa1-xAs III-V Arsenide ternary semiconductor alloys. International Journal of Physical Sciences, 9(12), 281-291.
Chicago /
Alla Srivani, Vedam Ram Murthy and G. Veera Raghavaiah. "Research in physical properties of AlxGa1-xAs III-V Arsenide ternary semiconductor alloys." International Journal of Physical Sciences 9, no. 12 (2014): 281-291.
MLA /
Alla Srivani, Vedam Ram Murthy and G. Veera Raghavaiah. "Research in physical properties of AlxGa1-xAs III-V Arsenide ternary semiconductor alloys." International Journal of Physical Sciences 9.12 (2014): 281-291.
DOI /
https://doi.org/10.5897/IJPS2013.3838
URL /
https://academicjournals.org/journal/IJPS/article-abstract/809ED7345860

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This article is published under the terms of the Creative Commons Attribution License 4.0

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