International Journal of
Physical Sciences

  • Abbreviation: Int. J. Phys. Sci.
  • Language: English
  • ISSN: 1992-1950
  • DOI: 10.5897/IJPS
  • Start Year: 2006
  • Published Articles: 2572

Full Length Research Paper

Investigation of structural properties of layered III-nitride semiconductor materials by high resolution X-rays diffraction

S. Ndiaye1*, A. Dioum1, P. D. Tall1, K. Bejtka2, M. Laugt3, H. P. D. Schenk3,4 and A. C. Beye1    
1Groupe de Laboratoires de Physique des Solides et Sciences des Matériaux, Département de Physique, Faculté des Sciences et Techniques Université Cheikh Anta Diop, Dakar, Sénégal. 2Center for Space and Human Robotics, Italian Institute of Technology (IIT@PoliTO), Corso Trento 21, 10129 Torino, Italy. 3CRHEA-CNRS, Rue Bernard Gregory, Sophia-Antipolis, 06560 Valbonne, France. 4PICOGIGA International, Place Marcel Rebuffat, Parc de Villejust, 91971 Courtaboeuf, France.

  •  Accepted: 06 January 2012
  •  Published: 02 March 2012

Abstract

High resolution X-ray diffraction (HRXRD) was used to investigate the structural properties of group III-nitride semiconductors, and was shown to give separable information on crystalline quality as well as on chemical composition, residual stresses, etc. Contributions from the various structural parameters to the HRXRD diagram profile, although mixed to each other, have been sorted out. Through the examples of GaN/InxAl1-xN/GaN heterostructures and AlxGa1-xN/GaN superlattices (SLs), grown by metal-organic chemical vapour deposition, it has been shown that all the structural parameters of III-nitrides are deducible from HRXRD combined with simulation methods.

 

Key words: X-ray diffraction, heterostructure, superlattice, III-nitride, lattice parameter, relaxation state.

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