Investigation of structural properties of layered III-nitride semiconductor materials by high resolution X-rays diffraction
S. Ndiaye1*, A. Dioum1, P. D. Tall1, K. Bejtka2, M. Laugt3, H. P. D. Schenk3,4 and A. C. Beye1
1Groupe de Laboratoires de Physique des Solides et Sciences des Matériaux, Département de Physique, Faculté des Sciences et Techniques Université Cheikh Anta Diop, Dakar, Sénégal.
2Center for Space and Human Robotics, Italian Institute of Technology (IIT@PoliTO), Corso Trento 21, 10129 Torino, Italy.
3CRHEA-CNRS, Rue Bernard Gregory, Sophia-Antipolis, 06560 Valbonne, France.
4PICOGIGA International, Place Marcel Rebuffat, Parc de Villejust, 91971 Courtaboeuf, France.