High voltage buried step-doping p+ layer silicon-on-insulator lateral double diffused mosfet (SOI LDMOSI) with a back-gate
Xiaoming Yang1,2*, Bo Zhang1 and Xiaorong Luo1
1State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
2School of Electrical and Information, Xihua University, Chengdu 610039, China.
Email: [email protected]
