Scientific Research and Essays

  • Abbreviation: Sci. Res. Essays
  • Language: English
  • ISSN: 1992-2248
  • DOI: 10.5897/SRE
  • Start Year: 2006
  • Published Articles: 2758

Full Length Research Paper

Effects of incidence polarization on radiative properties of doped silicon multilayer structures

S. A. A. Oloomi*, A. Saboonchi and A. Sedaghat
Department of Mechanical Engineering, Isfahan University of Technology, Isfahan, 84156-83111, I. R. of Iran.
Email: [email protected]

  •  Accepted: 19 May 2010
  •  Published: 18 July 2010

Abstract

Study of the surfaces which covered by thin films are very important. In this paper, the doped silicon with donors and acceptors with different concentrations coated by silicon dioxide and different polarization incident angles are studied. Results show that effect of doped ions for low concentrations is not considerable, so the ion effects in the scattering time become apparent for the concentrations more than. Results also show that the difference between S-polarization and P-polarization increases with increasing of incidence angle. The reflectance of S-polarization is greater than the reflectance of P-polarization. When the incident radiation is unpolarized, the radiative properties are averaged over p and s polarizations. Thermal radiaitive properties of nanoscale multilayer structures strongly depend on impurity types and incidence polarization. Therefore industrial requirements are supported by selecting donors or acceptors and s or p incidence polarizatio

 

Key words: Doped silicon, incidence angle, nanoscale, P-polarization, radiative properties, S-polarization.