Scientific Research and Essays

  • Abbreviation: Sci. Res. Essays
  • Language: English
  • ISSN: 1992-2248
  • DOI: 10.5897/SRE
  • Start Year: 2006
  • Published Articles: 2753

Full Length Research Paper

An improvement of electrical characteristics of P-N diode by X-ray irradiation method

Jirawat Prabket1, Itsara Srithanachai1, Surada Ueamanapong1, Amporn Poyai2, Wisut Titiroongruang1, Surasak Niemcharoen1 and Preecha P. Yupapin3*
1Department of Electronics Engineering, Faculty of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand. 2Thai Microelectronics Center (TMEC), 51/4 Moo 1, Wang-Takien District, Amphur Muang, Chachoengsao 24000, Thailand. 3Nanoscale Science and Engineering Research Alliance (N’SERA), Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand.
Email: [email protected]

  •  Accepted: 16 February 2012
  •  Published: 31 March 2012

Abstract

This paper presents a new technique of semiconductor fabrication technology, where a soft X-ray annealing method is proposed as a new technique and used in this work. The effect of Pt and Soft X-ray annealing on P-N diodes was investigated. The tested P-N diodes were fabricated at TMEC laboratory using CMOS technology. Results obtained have shown that the platinum doping is affected both reverse and forward current characteristics of P-N diode, the leakage current is increased slightly, while the forward current is also increased 3 to 4 times, which is a result of reduction of carrier recombination lifetime of diode from 72 to 55 µs. The characteristics of P-N diode after X-ray irradiation is improved significantly. There is a slight reduction of leakage current, whereas the forward current is increased about 3 to 4 order of magnitude. Furthermore, the recombination lifetime is decreased from 54 to 48 µs.

 

Key words: Soft X-ray annealing method, P-N diode, forward current.