Abstract

This paper presents a new technique of semiconductor fabrication technology, where a soft X-ray annealing method is proposed as a new technique and used in this work. The effect of Pt and Soft X-ray annealing on P-N diodes was investigated. The tested P-N diodes were fabricated at TMEC laboratory using CMOS technology. Results obtained have shown that the platinum doping is affected both reverse and forward current characteristics of P-N diode, the leakage current is increased slightly, while the forward current is also increased 3 to 4 times, which is a result of reduction of carrier recombination lifetime of diode from 72 to 55 µs. The characteristics of P-N diode after X-ray irradiation is improved significantly. There is a slight reduction of leakage current, whereas the forward current is increased about 3 to 4 order of magnitude. Furthermore, the recombination lifetime is decreased from 54 to 48 µs.

Key words: Soft X-ray annealing method, P-N diode, forward current.