Scientific Research and Essays

  • Abbreviation: Sci. Res. Essays
  • Language: English
  • ISSN: 1992-2248
  • DOI: 10.5897/SRE
  • Start Year: 2006
  • Published Articles: 2748

Full Length Research Paper

Failure model and detecting method for MOSFET degradation in DC-DC power converters

Li-Feng Wu
  • Li-Feng Wu
  • College of Information Engineering, Capital Normal University, Beijing 100048, China.
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Peng-Fei Dong
  • Peng-Fei Dong
  • Beijing Engineering Research Center of High Reliable Embedded System, Capital Normal University, Beijing 100048, China.
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Yong Guan
  • Yong Guan
  • Beijing Key Laboratory of Electronic System Reliable Technology, Capital Normal University, Beijing, 100048 China.
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Guo-Hui Wang
  • Guo-Hui Wang
  • College of Information Engineering, Capital Normal University, Beijing 100048, China.
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Xiao-Juan Li
  • Xiao-Juan Li
  • Beijing Key Laboratory of Electronic System Reliable Technology, Capital Normal University, Beijing, 100048 China.
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  •  Received: 02 March 2014
  •  Accepted: 28 March 2014
  •  Published: 15 April 2014

Abstract

MOSFET is the most commonly used devices in DC-DC power converters, and its performance is important to the prognosis and health management of power. The paper proposes a degradation analysis model for MOSFET in DC-DC power converters. A method for detecting the degradation of MOSFET is also introduced. Simulations have shown that the method can predict deterioration in the performance of MOSFET. The simulation results are good agreement with the theory.

 

Key words: DC-DC converter, degradation, MOSFET.